a) Thickness measurements as a function of cycle for ALE on a SiO

$ 11.50

4.9
(434)
In stock
Description

Question 3: (a) A 1000 Å thick SiO2 layer is grown on

a) Thickness measurements as a function of cycle for ALE on a SiO 2

IJMS, Free Full-Text

Review: Why Cycles S7 - BikeMag

Carbon concentration increases with depth of melting in Earth's upper mantle

Dissociative chemisorption of methyl fluoride and its implications for atomic layer etching of silicon nitride - ScienceDirect

a) Net etch of SiO 2 and SiN x surfaces as a function of ALE cycles.

Atomic layer etching of SiO2 using trifluoroiodomethane - ScienceDirect

Fundamental Good Practice in Dimensional Metrology - NPL

Global Volcanism Program

Etch depth (Å) and etch depth/cycle (Å/cycle) for two Cr ALE methods

Nanomanufacturing: ALD FUNdamentals

a) TiO2 layer thickness measured by in situ SE as a function of the

300 mm-wafer metrology for area-selective deposition in nanoscale patterns: A case study for ruthenium atomic layer deposition - ScienceDirect